BENASKEUR, N.; HACHOUF, M. GaAs electrical-properties enhancement by neutron transmutation doping. Algerian Journal of Engineering and Technology, [S. l.], v. 9, n. 1, p. 75–83, 2024. DOI: 10.57056/ajet.v9i1.162. Disponível em: https://journal.univ-eloued.dz/index.php/ajet/article/view/162. Acesso em: 21 dec. 2024.